Vishay IR-Fototransistor 850 nm 70 V TO-18

The Vishay IR phototransistor 850 nm 70 V TO-18 is a highly advanced electronic component specifically designed for applications in infrared technology. With a peak sensitivity at 850 nm, this phototransistor is ideal for detecting infrared light and is excellent for various optoelectronic applications. The transistor offers a maximum collector-emitter voltage of 70 V and a collector-emitter saturation voltage of only 0.3 V, making it an efficient choice for precise circuits. The fast fall time of up to 5 µs ensures reliable performance in dynamic applications. The TO-18 package type provides a compact design suitable for use in different electronic devices.

• Maximum collector-emitter voltage of 70 V
• Fast fall time of up to 5 µs
• Collector current of up to 50 mA
• Peak sensitivity at 850 nm.